Journal Article

·2008

Observation of apparent MOS regimes on Al/PECVD grown boron nitride/p-c-Si/Al MIS structure, investigated through admittance spectroscopy

Özgür Özdemir YTU

International Journal of Hydrogen Energy

No open-access abstract is available for this article. Use the DOI link on the right to read the full text.

Keywords

Boron nitride Plasma-enhanced chemical vapor deposition Admittance Materials science Boron Nitride Spectroscopy Analytical Chemistry (journal) Optoelectronics Chemistry Silicon Nanotechnology Electrical engineering Physics Electrical impedance

Subject Areas

GaN-based semiconductor devices and materials ·Condensed Matter Physics ·Physical Sciences
Semiconductor materials and devices ·Electrical and Electronic Engineering ·Physical Sciences
Boron and Carbon Nanomaterials Research ·Materials Chemistry ·Physical Sciences

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